SILICON-SENSITIZED ERBIUM EXCITATION IN SILICON-RICH SILICA FOR INTEGRATED PHOTONICS by OLEKSANDR SAVCHYN
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چکیده
منابع مشابه
Evolution of the sensitized Er3+ emission by silicon nanoclusters and luminescence centers in silicon-rich silica
The structural and optical properties of erbium-doped silicon-rich silica samples containing different Si concentrations are studied. Intense photoluminescence (PL) from luminescence centers (LCs) and silicon nanoclusters (Si NCs), which evolves with annealing temperatures, is obtained. By modulating the silicon concentrations in samples, the main sensitizers of Er(3+) ions can be tuned from Si...
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Silicon (Si) based light emitting devices have drawn much attention for the integration of electronic and photonics. Si nanostructures (amorphous clusters or crystals) have been recognized as good candidates for effective light emitting devices (Bulutay, 2007; Seino et al., 2009; Takagahara & Takeda, 2007; Wolkin et al., 1999). However, photons emitted by Si nanostructures can be reabsorbed by ...
متن کاملLimit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering
We have fabricated a series of thin (~50 nm) erbium-doped (by ion implantation) silicon-rich oxide films in the configuration that mitigates previously proposed mechanisms for loss of light emission capability of erbium ions. By combining the methods of optical, structural and electrical analysis, we identify the erbium ion clustering as a driving mechanism to low optical performance of this ma...
متن کاملTemperature dependence of sensitized Er3+ luminescence in silicon-rich oxynitride films
The temperature dependence of sensitized Er(3+) emission via localized states and silicon nanoclusters has been studied to get an insight into the excitation and de-excitation processes in silicon-rich oxynitride films. The thermal quenching of Er(3+) luminescence is elucidated by terms of decay time and effective excitation cross section. The temperature quenching of Er(3+) decay time demonstr...
متن کاملAbsorption bleaching by stimulated emission in erbium-doped silicon-rich silicon nitride waveguides.
Stimulated emission from sensitized erbium ions in silicon-rich silicon nitride is demonstrated by pump-probe measurements carried out in waveguides. A decrease in the photoinduced absorption of the probe at the wavelength of erbium emission is observed and is attributed to stimulated emission from erbium excited indirectly via localized states in the silicon nitride matrix.
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تاریخ انتشار 2010